RJK5012DPP
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1545-0100
Rev.1.00
May 10, 2007
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
1. Gate
2. Drain
3. Source
G
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW ≤ 10 µs, duty cycle ≤ 1%
Value at Tc = 25°C
STch = 25°C, Tch ≤ 150°C
Limited by maximum safe operation area
REJ03G1545-0100 Rev.1.00 May 10, 2007
Page 1 of 6
Symbol
VDSS
VGSS
IDNote4
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
Ratings
500
±30
12
24
12
24
4
Unit
V
V
A
A
A
A
A
EARNote3
Pch Note2
θch-c
Tch
Tstg
0.88
30
4.17
150
–55 to +150
mJ
W
°C/W
°C
°C
