Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No
History
Draft Date
Remark
0.0
1. Initial issue
Sep. 19.2001
Advance
0.1
1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)
Nov. 22. 2002
Preliminary
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 35)
0.2
The min. Vcc value 1.8V devices is changed.
K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 6.2003
Preliminary
0.3
Few current value is changed.
Before
Apr. 2. 2003
Preliminary
Apr. 9. 2003
Preliminary
K9F2GXXQ0M
Unit : us
K9F2GXXU0M
Typ.
ISB2
Max.
Typ.
Max.
20
100
20
100
ILI
-
±20
-
±20
ILO
-
±20
-
±20
After
K9F2GXXQ0M
Typ.
K9F2GXXU0M
Max.
Typ.
Max.
ISB2
50
10
50
-
±10
-
±10
ILO
0.4
10
ILI
-
±10
-
±10
1. The 3rd Byte ID after 90h ID read command is don’ cared.
t
The 5th Byte ID after 90h ID read command is deleted.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
3. Pb-free Package is added.
K9F2G08Q0M-PCB0,PIB0
K9F2G08U0M-PCB0,PIB0
K9F2G16U0M-PCB0,PIB0
K9F2G16Q0M-PCB0,PIB0
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1
