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STTH2R06A
STTH2R06 High efficiency ultrafast diode Features A ■ ■ Negligible switching losses ■ Low forward and reverse recovery times ■ K Very low conduction losses High junction temperature Description DO-41 STTH2R06 SMA STTH2R06A SMB STTH2R06U The STTH2R06 uses ST Turbo 2 600 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits. Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection. SMC STTH2R06S Table 1. Device summary Symbol IF(AV) 600 V Tj 175 °C VF(typ) 1.0 V trr (typ) Doc ID 10757 Rev 4 2A VRRM December 2009 Value 35 ns 1/10 www.st.com 10
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