STTH2R06
High efficiency ultrafast diode
Features
A
■
■
Negligible switching losses
■
Low forward and reverse recovery times
■
K
Very low conduction losses
High junction temperature
Description
DO-41
STTH2R06
SMA
STTH2R06A
SMB
STTH2R06U
The STTH2R06 uses ST Turbo 2 600 V planar Pt
doping technology. It is specially suited for
switching mode base drive and transistor circuits.
Packaged in axial, SMA, SMB and SMC, this
device is intended for use in high frequency
inverters, free wheeling and polarity protection.
SMC
STTH2R06S
Table 1.
Device summary
Symbol
IF(AV)
600 V
Tj
175 °C
VF(typ)
1.0 V
trr (typ)
Doc ID 10757 Rev 4
2A
VRRM
December 2009
Value
35 ns
1/10
www.st.com
10
