DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PBSS5330X
30 V, 3 A
PNP low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2003 Nov 28
2004 Nov 03
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−30
V
VCEO
collector-emitter voltage
open base
−
−30
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
note 4
−
−3
A
ICM
peak collector current
limited by Tj(max)
−
−5
A
IB
base current (DC)
−
−0.5
A
Ptot
total power dissipation
note 1
−
550
mW
note 2
−
1
W
note 3
−
1.4
W
note 4
−
1.6
W
Tamb ≤ 25 °C
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
2004 Nov 03
3
