TP0101K
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID
0.65 at VGS = - 4.5 V
- 0.58
0.85 at VGS = - 2.5 V
- 20
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• ESD Protected: 3000 V
(A)e
- 0.5
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems, DC/DC Converters
• Power Supply Converter Circuits
• Load/Power Switching-Cell Phones, Pagers
D
TO-236
(SOT-23)
Marking Code: K4ywl
G
100 Ω
1
G
K4 = Part Number Code for TP0101K
3
D
2
S
y = Year Code
w = Week Code
l = Lot Traceability
Top View
S
Ordering Information: TP0101K-T1-E3 (Lead (Pb)-free)
TP0101K-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 70 °C
Pulsed Drain Currenta
Power Dissipationb
- 0.46
TA = 70 °C
- 0.3
0.35
PD
W
0.22
TJ, Tstg
Operating Junction and Storage Temperature Range
A
-2
IS
TA = 25 °C
V
- 0.58
ID
IDM
Continuous Source-Drain (Diode Current)b
Unit
- 55 to 150
°C
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 10 s.
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance,
Symbol
Junction-to-Ambientb
Limits
Unit
RthJA
357
°C/W
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
www.vishay.com
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