BC560C
Low Noise Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−45
Vdc
Collector −Base Voltage
VCBO
−50
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−100
mAdc
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
PD
625
5.0
mW
mW/°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
1
12
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
BC56
0C
AYWW G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 4
1
Shipping
BC560CG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−92
(Pb−Free)
5000 Units / Bulk
BC560CZL1G
TO−92
(Pb−Free)
2000 / Ammo Pack
Publication Order Number:
BC560C/D
