Medium Power Transistor (32V, 1A)
2SD1664 / 2SD1858
Dimensions (Unit : mm)
2SD1664
0.4 + 0.1
−
1.5 + 0.1
−
(2)
(3)
0.5 + 0.1
−
3.0 + 0.2
−
0.4+0.1
−0.05
0.65Max.
0.4 + 0.1
−
1.5 + 0.1
−
0.5 + 0.1
−
(1)
(2)
(3)
2.54 2.54
Abbreviated symbol: DA∗
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
14.5 + 0.5
−
1.0 + 0.2
−
(1)
4.4 + 0.2
−
0.9
0.5 + 0.1
−
2.5 + 0.2
−
6.8 + 0.2
−
1.5 +0.2
−0.1
2.5+0.2
−0.1
4.0 + 0.3
−
Structure
Epitaxial planar type
NPN silicon transistor
2SD1858
4.5+0.2
−0.1
1.6 + 0.1
−
1.0
Features
1) Low VCE(sat) = 0.15V(Typ.)
(lC / lB = 500mA / 50mA)
2) Compliments 2SB1132 / 2SB1237
1.05
ROHM : ATV
0.45 + 0.1
−
(1) Emitter
(2) Collector
(3) Base
∗ Denotes hFE
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Parameter
Collector current
1
IC
A (DC)
A (Pulse) ∗1
2
0.5
Collector
power dissipation
2SD1664
2
PC
∗2
∗3
W
1
2SD1858
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
+
+
∗1 Pw=20ms, duty=1/2
∗2 When mounted on a 40 40 0.7 mm ceramic board.
∗3 When it is mounted on the copper clad PCB (1.7mm thick) with land size for collector 1
square CM or larger.
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
40
−
−
V
IC=50μA
Collector-emitter breakdown voltage
BVCEO
32
−
−
V
IC=1mA
Emitter-base breakdown voltage
Parameter
Conditions
BVEBO
5
−
−
V
IE=50μA
Collector cutoff current
ICBO
−
−
0.5
μA
VCB=20V
Emitter cutoff current
IEBO
−
−
0.5
μA
VEB=4V
DC current transfer ratio
hFE
120
−
390
−
VCE=3V, IC=100mA
VCE(sat)
−
0.15
0.4
V
Transition frequency
fT
−
150
−
MHz
Output capacitance
Cob
−
15
−
pF
Collector-emitter saturation voltage
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1/3
IC/IB=500mA / 50mA
VCE=5V, IE= −50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
2009.12 - Rev.A
