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74HC03N
74HC03; 74HCT03 Quad 2-input NAND gate Rev. 3 — 27 June 2013 Product data sheet 1. General description The 74HC03; 74HCT03 is a quad 2-input NAND gate with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits Input levels: For 74HC03: CMOS level For 74HCT03: TTL level ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V Multiple package options Specified from 40 C to +85 C and from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number Package Temperature range 74HC03N Name Description Version 40 C to +125 C DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1 40 C to +125 C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 74HCT03N 74HC03D 74HCT03D 74HC03DB 74HCT03DB 74HC03PW 74HCT03PW 74HC03; 74HCT03 NXP Semiconductors Quad 2-input NAND gate 6. Functional description Table 3. Function table[1] Input Output nA nB nY L L Z L H Z H L Z H H L [1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage VO output voltage IIK input clamping current IOK Conditions Min Max Unit 0.5 +7 V [1] 0.5 +7 V VI < 0.5 V or VI > VCC + 0.5 V [1] - 20 mA output clamping current VO < 0.5 V [1] - 20 mA IO output current 0.5 V < VO - 25 mA ICC supply current - 50 mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C DIP14 package - 750 mW SO14 and (T)SSOP14 packages - 500 mW total power dissipation Ptot [1] [2] [2] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. For DIP14 package: Ptot derates linearly with 12 mW/K above 70 C. For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V) Symbol Parameter Conditions 74HC03 Min Typ 74HCT03 Max Min Typ Unit Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0 - VCC V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature 40 +25 +125 40 +25 +125 C 74HC_HCT03 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 27 June 2013 © NXP B.V. 2013. All rights reserved. 3 of 15
NS
National Semiconductor Corporation 日本ではナショセミと略称されていたが2011年9月23日、米TI社に買収され、同社のシリコンバレー部門となった。
TI
Texas Instruments Incorporated
U.S.A
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