HOME>在庫検索>在庫情報
CLY10
CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its easy matching and excellent linearity. The CLY10 exhibits +28.5 dBm output power with +3V Vds at 1.8 GHz with an associated gain of 8 dB. Power added efficiencies to 55% are achievable. Features: • For frequencies up to 2.5 GHz • • Power Amplifiers for WLAN transceivers • Driver Amplifiers for WLAN or mobile phone basestations SOT-223 Package Outline: High efficiency: better than 55 % • Power amplifier for mobile phones POUT 28.5 dBm typical at VD=3V, f=1.8GHz • • Wide operating voltage range: 2.7 to 6 V • Applications: Low Cost Pin Configuration: 1: Gate 2 & 4: Source 3: Drain For further information, please visit www.triquint.com June 5th, 2003 Page 1 of 8
INFINEON
Infineon Technologies
ドイツ
インフィニオン・テクノロジーは半導体ソリューション、マイクロコントローラー、LEDドライバ、センサー、自動車産業およびパワーマネージメントICに数多くの製品・サービスを提供しています。
弊社からの見積回答メールの返信又はFAXにてお願いします。