KSC1675
KSC1675
FM/AM RF AMP, MIX, CONV,OSC,IF
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•
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Collector-Base Voltage : VCEO=30V
High Current Gain Bandwidth Product : fT=300MHz (TYP.)
Low Collector Capacitance : COB=2.0pF (TYP.)
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
50
Units
V
VCEO
VEBO
Collector-Emitter Voltage
30
V
Emitter-Base Voltage
5
V
IC
Collector Current
50
mA
PC
Collector Power Dissipation
250
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=10µA, IE=0
Min.
50
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
5
ICBO
Collector Cut-off Current
VCB=50V, IE=0
Max.
30
BVEBO
Typ.
Units
V
V
V
0.1
µA
0.1
µA
IEBO
Emitter Cut-off Current
VEB=5V, IC=0
hFE
DC Current Gain
VCE=6V, IC=1mA
VBE (on)
Base-Emitter On Voltage
VCE=6V, IC=1mA
0.67
0.75
VCE (sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=1mA
0.08
0.3
fT
Current Gain Bandwidth Product
VCE=6V, IC=1mA
Cob
Output Capacitance
VCB=6V, IE=0, f=1MHz
40
150
240
300
2.0
V
V
MHz
2.5
pF
hFE Classification
Classification
R
O
Y
hFE
40 ~ 80
70 ~ 140
120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
