DATA SHEET
MOS INTEGRATED CIRCUIT
µ PD431016
1M-BIT CMOS FAST STATIC RAM
64K-WORD BY 16-BIT
Description
The µPD431016 is a high speed, low power, 1 048 576 bits (65 536 words by 16 bits) CMOS static RAM.
The µPD431016 are packed in 44-pin plastic SOJ.
Feature
q
65 536 words by 16 bits organization
q
Fast access time 15, 17, 20 ns (MAX.)
q
Output buffers control: OE
q
Byte data control: LB (I/O1 to I/O8), UB (I/O9 to I/O16)
q
Common I/O using three state output
q
Fully static operation: no clock or refreshing to operate
q
TTL compatible: all inputs and outputs
q
Single +5 V power supply
Ordering Information
Part number
Package
µ PD431016LE-15
µ PD431016LE-17
µ PD431016LE-20
Remark
ns (MAX.)
Operating
Standby
supply current
supply current
mA (MAX.)
Access time
mA (MAX.)
15
240
17
230
20
Quality grade
220
44-pin plastic
SOJ (400 mil)
10
Standard
Operating supply current is 180 mA (MAX.) when this product is used at 50 ns cycle time.
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
The information in this document is subject to change without notice.
Document No. IC-3243
(O.D.No.
IC-8818)
Date Published July 1993 P
Printed in Japan
©
1993
1992
