Data Sheet
Switching Diode
DAN222M
Dimensions (Unit : mm)
Land size figure (Unit : mm)
0.8
1.2±0.1
0.13±0.05
0.32±0.05
(3)
0.45
0～0.1
(2)
0.4
0.22±0.05
0.4
0.4
1.2±0.1
0.8±0.1
(1)
1.15
0.5
Features
1) Ultra small mold type. (VMD3)
2) High reliability.
0.22±0.05
0.45
Applications
Ultra high speed switching
0.5±0.05
VMD3
0.4
Construction
Silicon epitaxial planar
Structure
ROHM : VMD3
dot (year week factory)
Taping specifications (Unit : mm)
0.3±0.1
2.0±0.04
φ1.55±0.05
φ0.5±0.05
(4.0±0.1)
1.3±0.05
0
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
VR
Reverse voltage (DC)
IFM
Forward voltage (Single)
Average rectified forward current (Single)
Io
Isurge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
Limits
2.0±0.05
8.0±0.1
5.5±0.2
0～0.1
1.35±0.05
0
3.5±0.05
1.75±0.07
4.0±0.07
0.6±0.05
0
Unit
V
V
mA
mA
A
mW
°C
°C
80
80
300
100
4
150
150
55 to 150
Min.
Typ.
Max.
Unit
Conditions
-
-
1.2
V
IF=100mA
Reverse current
IR
-
-
0.1
μA
VR=70V
Capacitance between terminals
Reverse recovery time
Ct
-
-
3.5
pF
trr
-
-
4
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50
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2011.06 - Rev.B
