IRF9610, SiHF9610
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
- 200
RDS(on) (Ω)
VGS = - 10 V
• P-Channel
3.0
Qg (Max.) (nC)
7.0
Qgd (nC)
4.0
Configuration
COMPLIANT
• Simple Drive Requirements
• Lead (Pb)-free Available
Single
DESCRIPTION
S
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
TO-220
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
G
RoHS*
• Ease of Paralleling
11
Qgs (nC)
Available
• Fast Switching
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRF9610PbF
SiHF9610-E3
IRF9610
SiHF9610
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 200
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
Pulsed Drain
VGS at - 10 V
TC = 25
TC = 100
Currenta
ID
IDM
Linear Derating Factor
Maximum Power Dissipation
- 1.8
- 1.0
A
- 7.0
PD
W/°C
20
W
ILM
for 10 s
6-32 or M3 screw
A
- 5.0
V/ns
TJ, Tstg
Operating Junction and Storage Temperature Range
- 7.0
dV/dt
Peak Diode Recovery dV/dtc
Mounting Torque
V
0.16
TC = 25 °C
Inductive Current, Clamp
Soldering Recommendations (Peak Temperature)
UNIT
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not applicable.
c. ISD ≤ - 1.8 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
www.vishay.com
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