PD - 95224
IRLMS6702PbF
HEXFET® Power MOSFET
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Generation V Technology
Micro6 Package Style
Ultra Low RDS(on)
P-Channel MOSFET
Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
D
D
G
1
6
2
5
3
4
A
D
VDSS = -20V
D
RDS(on) = 0.20Ω
S
Top View
The Micro6™ package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Micro6™
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
V GS
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
-2.4
-1.9
-13
1.7
13
± 12
5.0
-55 to + 150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambient
Min.
Typ.
Max
Units
75
°C/W
1
1/14/05
