K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No. History
Draft Data
Remark
0.0
Initial Draft
January 13, 1998
Advance
0.1
Revisied
- Speed bin change
KM68U4000C: 85/100ns → 70/85/100ns
- DC Characteristics change
ICC: 5mA at read/write → 4mA at read
ICC1: 3mA → 4mA
ICC2: 35mA → 30mA
ISB: 0.5mA → 0.3mA
ISB1: 10µA → 15µA for commercial parts
- Add 32-TSOP1-0820
June 12, 1998
Preliminary
0.11
Errata correct
- 32-TSOP1-0813 products: T → TG
November 7, 1998
1.0
Finalize
January 15, 1999
Final
2.0
Revised
- Delete 32-TSOP1-0820 from product list
March 26, 2001
Final
2.01
Revised
- Improved VOH(output high voltage) from 2.2V to 2.4V.
- Errata correction for 32-TSOP1-0813.4 size form 13.40±0.10 to
13.40±0.20
October 15, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.01
October 2001
