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M28W431-120N5
M28W431 4 Mbit (512Kb x8, Boot Block) Low Voltage Flash Memory 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware write and erase protection – Parameter and Main Blocks 100,000 PROGRAM/ERASE CYCLES LOW POWER CONSUMPTION 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: F7h DESCRIPTION The M28W431 Flash memory is a non-volatile memorythat may be erased electricallyat the block level and programmed by byte. The interface is directly compatible with most microprocessors. The device is offered in TSOP40 (10 x 20mm) package. Table 1. Signal Names A0-A18 Address Inputs DQ0-DQ7 Output Enable W Write Enable WP Reset/Power Down/Boot Block Unlock VPP Program & Erase Supply Voltage VCC 8 19 A0-A18 DQ0-DQ7 RP Supply Voltage VSS VPP Write Protect RP VCC Chip Enable G Figure 1. Logic Diagram Data Input / Outputs E TSOP40 (N) 10 x 20mm Ground W M28W431 E August 1998 G WP VSS AI01714B 1/27
STM
STMicroelectronics NV
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