MTP9N25E
Designer’s™ Data Sheet
TMOS E−FET.™
Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon
Gate
This advanced TMOS E−FET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
9.0 AMPERES, 250 VOLTS
RDS(on) = 0.45 W
TO−220AB
CASE 221A−06
Style 5
D
®
G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
250
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
250
Vdc
Gate−to−Source Voltage — Continuous
— Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
ID
ID
9.0
5.7
32
Adc
PD
80
0.64
Watts
W/°C
TJ, Tstg
−55 to 150
°C
Rating
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 μs)
IDM
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Apk
Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 3.0 mH, RG = 25 Ω)
EAS
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
1.56
62.5
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
mJ
122
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number:
MTP9N25E/D
