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RK7002T116
RK7002 Transistors Interface and switching (60V, 115mA) RK7002 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) Features 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(5V). ROHM : SST3 E I A J : SOT-23 Abbreviated symbol : RKM Application Switching (1) Source (2) Gate (3) Drain Equivalent circuit Drain Gate ∗ Gate Protection Diode Source ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Continuous ID 115 mA Pulsed IDP∗1 800 mA Drain current 115 mA IDRP∗1 800 mA Total power dissipation PD∗2 225 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Reverse drain current ∗1 ∗2 Continuous Pulsed IDR Pw≤10µs, Duty cycle≤1% When mounted on a 1x0.75x0.062 inch glass epoxy board. Rev.A 1/3
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