Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
- 20
rDS(on) (W)
ID (A)
0.130 @ VGS = - 4.5 V
- 2.3
0.190 @ VGS = - 2.5 V
- 1.9
TO-236
(SOT-23)
G
1
3
S
D
Ordering Information: Si2301DS-T1
2
Top View
Si2301DS (A1)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)b
TA= 25_C
ID
TA= 70_C
Pulsed Drain Currenta
- 1.5
- 10
IS
TA= 25_C
Power Dissipationb
Operating Junction and Storage Temperature Range
A
- 1.6
PD
TA= 70_C
V
- 2.3
IDM
Continuous Source Current (Diode Conduction)b
Unit
1.25
0.8
W
TJ, Tstg
- 55 to 150
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
100
RthJA
166
_C/W
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
www.vishay.com
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