HOME＞在庫検索＞在庫情報
SI4562DY
Si4562DY Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel ID (A) 0.025 at VGS = 4.5 V 20 RDS(on) (Ω) 7.1 0.035 at VGS = 2.5 V - 20 6.0 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 2.5 Rated • Compliant to RoHS directive 2002/95/EC - 5.0 SO-8 D1 S1 1 8 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 D1 G2 G1 Top View S1 D2 N-Channel MOSFET Ordering Information: Si4562DY-T1-E3 (Lead (Pb)-free) Si4562DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C N-Channel 20 P-Channel - 20 ± 12 7.1 5.7 40 1.7 - 6.2 - 4.9 - 40 - 1.7 Unit V A Operating Junction and Storage Temperature Range TJ, Tstg 2.0 1.3 - 55 to 150 °C Symbol Maximum Power Dissipationa N- or P-Channel Unit RthJA 62.5 °C/W PD W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70717 S09-0867-Rev. C, 18-May-09 www.vishay.com 1
SAMSUNG
Samsung Electronics Co., Ltd
韓国
DRAM製品、モバイル機器の製造販売メーカー
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
