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BFN26-E6327
BFN24, BFN26 NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 2 3 and switching power supplies 1 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: BFN27 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking Pin Configuration Package BFN24 FHs 1=B 2=E 3=C SOT23 BFN26 FJs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage Value VCEO Unit V BFN24 250 BFN26 300 Collector-base voltage VCBO BFN24 250 BFN26 300 6 Emitter-base voltage VEBO Collector current IC 200 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg mA TS ≤ 74 °C 1Pb-containing -65 ... 150 package may be available upon special request 1 2007-04-20
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