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SMBTA42E6327
SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors • Low collector-emitter saturation voltage 2 3 • Complementary types: 1 SMBTA92 / MMBTA92(PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type SMBTA42/MMBTA42 Marking s1D Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 6 Collector current IC 500 Base current IB 100 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS V mA TS ≤ 74 °C -65 ... 150 Value ≤ 210 Unit K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19
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