BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCY78 and BCY79
series types are silicon PNP epitaxial planar transistors,
mounted in a hermetically sealed metal case, designed
for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
PD
TJ, Tstg
JA
JC
CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCB=Rated VCBO, TA=150°C
VEB=5.0V
IC=10μA (BCY78)
32
IC=10μA (BCY79)
45
IC=2.0mA (BCY78)
32
IC=2.0mA (BCY79)
45
IE=1.0μA
5.0
IC=10mA, IB=250μA
IC=100mA, IB=2.5mA
IC=10mA, IB=250μA
0.60
IC=100mA, IB=2.5mA
0.70
VCE=5.0V, IC=2.0mA
0.60
VCE=5.0V,
VCE=5.0V,
VCE=1.0V,
VCE=1.0V,
IC=10μA
IC=2.0mA
IC=10mA
IC=100mA
BCY78-VII
BCY79-VII
MIN TYP MAX
- 140
120 220
80
40
-
BCY78
32
32
BCY79
45
45
5.0
100
200
200
340
1.0
-65 to +200
450
150
MAX
15
10
20
0.25
0.80
0.85
1.20
0.75
BCY78-VIII
BCY79-VIII
MIN MAX
30
180 310
120 400
45
-
BCY78-IX
BCY79-IX
MIN MAX
40
250 460
160 630
60
-
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
V
BCY78-X
BCY79-X
MIN MAX
100
380 630
240 1000
60
-
R4 (4-June 2013)
