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BTS141-E3045A
HITFET® BTS 141 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance RDS(on) 28 mΩ • Thermal Shutdown Current limit ID(lim) 25 A • Overload protection Nominal load current ID(ISO) 12 A • Short circuit protection Clamping energy EAS 4000 mJ • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD M Drain 2 dv/dt limitation 1 IN ESD Overload protection Current Overvoltage protection lim itation Overtemperature protection Short circuit Short circuit protection protection Source HIT F ET Semiconductor Group Page 1 3 ® 13.07.1998
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