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PMBFJ310
3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Low noise Interchangeability of drain and source connections High gain. 1.3 Applications AM input stage in car radios VHF amplifiers Oscillators and mixers. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS Min Typ Max Unit - drain-source voltage VGSoff Conditions - 25 V gate-source cut-off voltage PMBFJ308 VDS = 10 V; ID = 1 A 1 - 6.5 V PMBFJ309 VDS = 10 V; ID = 1 A 1 - 4 PMBFJ310 VDS = 10 V; ID = 1 A 2 - 6.5 V V
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