TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/476
Devices
2N5114
Qualified
Level
2N5115
JAN
JANTX
JANTXV
2N5116
ABSOLUTE MAXIMUM RATINGS (TC =+250C unless otherwise noted)
Parameters / Test Conditions
Symbol
All Devices
Unit
Gate-Source Voltage (1)
VGS
30
Vdc
Drain-Source Voltage (1)
VDS
30
Vdc
Drain-Gate Voltage
VDG
30
Vdc
Gate Current
IG
50
mAdc
Power Dissipation
TA = +250C (2)
PT
0.500
W
0
Storage Temperature Range
Tstg
-65 to +200
C
(1) Symmetrical geometry allows operation of those units with source/drain leads interchanged.
(2) Derate linearly 3.0 mW/0C for TA > 250C.
TO-18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Parameters / Test Conditions
Symbol
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 µAdc
Drain-Source “On” State Voltage
VGS = 0 Vdc, ID = -15 mAdc
VGS = 0 Vdc, ID = -7.0 mAdc
VGS = 0 Vdc, ID = -3.0 mAdc
Gate Reverse Current
VDS = 0, VGS = 20 Vdc
Drain Current Cutoff
VGS = 12 Vdc, VDS = -15 Vdc
VGS = 7.0 Vdc, VDS = -15 Vdc
VGS = 5.0 Vdc, VDS = -15 Vdc
V(BR)GSS
2N5114
2N5115
2N5116
VDS(on)
IGSS
2N5114
2N5115
2N5116
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
ID(off)
Min.
Max.
30
Units
Vdc
1.3
0.8
0.6
Vdc
500
pAdc
-500
-500
-500
pAdc
pAdc
pAdc
120101
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