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BUK9628-100
D2 PA K BUK9628-100A N-channel TrenchMOS logic level FET Rev. 02 — 26 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tmb = 25 °C - - 49 A Ptot total power dissipation - - 166 W VGS = 5 V; ID = 25 A; Tj = 25 °C - 18.5 28 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C - 17 27 mΩ ID = 30 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped - - 45 mJ Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
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