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部品型式

SS14

製品説明
仕様・特性

SS12 thru SS16 Vishay Semiconductors formerly General Semiconductor DO-214AC (SMA) Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 60V Forward Current 1.0A Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.177 (4.50) 0.094 MAX. (2.38 MAX.) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.052 MIN. (1.32 MIN.) 0.090 (2.29) 0.078 (1.98) 0.220 (5.58) REF Dimensions in inches and (millimeters) 0.060 (1.52) 0.008 (0.203) MAX. 0.030 (0.76) 0.208 (5.28) 0.194 (4.93) Features Mechanical Data • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low profile surface mount package • Built-in strain relief • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • Guardring for overvoltage protection Case: JEDEC DO-214AC molded plastic body Terminals: Solder plated, solderable per MIL-STD750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Polarity: Color band denotes cathode end Weight: 0.002 ounce, 0.064 gram Maximum Ratings and Thermal Characteristics (T Parameter Symbol Device marking code A = 25°C unless otherwise noted) SS12 SS13 SS14 SS15 SS16 Unit S2 S3 S4 S5 S6 V Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRMS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Maximum average forward rectified current at TL (See Fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3ms single half sinewave superimposed on rated load (JEDEC Method) IFSM 40 A Typical thermal resistance (2) RΘJA RΘJL 88 28 °C/W Operating junction temperature range TJ Storage temperature range Electrical Characteristics TSTG -65 to +150 -65 to +150 °C °C (TA = 25°C unless otherwise noted) Maximum instantaneous forward voltage at 1.0A(1) Maximum DC reverse current at rated DC blocking voltage (1) -65 to +125 TA=25°C TA=100°C VF IR 0.50 0.75 0.2 6.0 5.0 V mA Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle (2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas Document Number 88746 13-Feb-02 www.vishay.com 1

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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