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部品型式

SMCJ58A

製品説明
仕様・特性

SMCJ5.0 thru 188CA Surface Mount TRANSZORB® Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB (SMC J-Bend) Cathode Band ded ge xten Ran E e ltag Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.121 MIN. (3.07 MIN.) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 MIN. (1.52 MIN.) Dimensions in inches and (millimeters) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) 0.185 MAX. (4.69 MAX.) 0.320 REF 0.008 (0.203) Max. Features Mechanical Data Case: JEDEC DO-214AB molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: For unidirectional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation Weight: 0.007oz., 0.21g Packaging Codes – Options (Antistatic): 51 – 1K per Bulk box, 10K/carton 57 – 850 per 7” plastic Reel (16mm tape), 8.5K/carton 9A – 3.5K per 13” plastic Reel (16mm tape), 35K/carton • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low profile package with built-in strain relief for surface mounted applications • Glass passivated junction • Low incremental surge resistance, excellent clamping capability • 1500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% • Very fast response time • High temperature soldering guaranteed: 250°C/10 seconds at terminals • Contact local sales office for gull-wing lead (SMCG prefix) form (DO-215AB) Devices for Bidirectional Applications For bi-directional devices, use suffix C or CA (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply in both directions. Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Unit PPPM Minimum 1500 W IPPM See Next Table A IFSM 200 A Typical thermal resistance, junction to ambient (3) RθJA 75 °C/W Typical thermal resistance, junction to lead RθJL 15 °C/W TJ, TSTG –55 to +150 °C Peak pulse power dissipation with a 10/1000µs waveform(1)(2) Peak pulse current with a 10/1000µs waveform(1) Peak forward surge current 8.3ms single half sine-wave uni-directional only Operating junction and storage temperature range (2) Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2 (2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout 10/17/01

ブランド

STM

会社名

STMicroelectronics NV

本社国名

スイス

事業概要

半導体を製造・販売する、スイスのジュネーヴに本社を置く企業。 日本法人は、エス・ティー・マイクロエレクトロニクス株式会社。

供給状況

 
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