1SV314
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SV314
VCO for UHF Band Radio
High Capacitance Ratio
Low Series Resistance
Unit: mm
: C0.5 V / C2.5 V = 2.5 (Typ.)
: rs = 0.35 Ω (Typ.)
Useful for Small Size Tuner
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
VR
10
V
Junction Temperature
Tj
125
°C
Tstg
−55~125
°C
Storage Temperature Range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
—
operating temperature/current/voltage, etc.) are within the
JEITA
—
absolute maximum ratings.
TOSHIBA
1−1G1A
Please design the appropriate reliability upon reviewing the
Weight:0.0014g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Reverse Voltage
VR
IR = 1μA
10
—
—
V
Reverse Current
IR
VR = 10 V
—
—
3
nA
Capacitance
C0.5 V
VR = 0.5 V, f = 1 MHz
7.3
—
8.4
pF
Capacitance
C2.5 V
VR = 2.5 V, f = 1 MHz
2.75
—
3.4
pF
Capacitance Ratio
C0.5 V /
C2.5 V
2.4
2.5
—
—
Series Resistance
rs
—
0.35
0.45
Ω
—
VR = 1 V, f = 470 MHz
Marking
1
2007-11-01
