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PBYR2025CT
Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies with 3 V - 3.3 V outputs, or as or-ing diodes in fault tolerant power supply systems. PINNING - TO220AB PIN PBYR2025CT series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) PBYR20Repetitive peak reverse voltage Forward voltage Average output current (both diodes conducting) 20CT 20 25CT 25 V 0.41 20 0.41 20 V A SYMBOL tab anode 2 (a) tab UNIT cathode (k) 3 MAX. anode 1 (a) 2 MAX. PIN CONFIGURATION DESCRIPTION 1 PARAMETER cathode (k) a2 3 a1 1 k2 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 120 ˚C IO(AV) Average output current (both diodes conducting) RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode IO(RMS) IFRM IFSM I2t IRRM IRSM Tstg Tj August 1996 CONDITIONS square wave; δ = 0.5; Tmb ≤ 135 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 135 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature 1 MIN. - MAX. -20 20 20 20 UNIT -25 25 25 25 V V V - 20 A - 28 A - 20 A - 135 150 A A - 91 1 A2s A - 1 A -65 - 175 150 ˚C ˚C Rev 1.100
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