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TLP251D4-TP1,F
TLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mm Transistor Inverter Inverter For Air Conditionor IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250F consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP. TLP250F is suitable for gate driving circuit of IGBT or power MOS FET. · Input threshold current: IF = 5mA (max.) · Supply current: 11mA (max.) · Supply voltage: 10~35V · Output current: ±1.5A (max.) · Switching time: tpHL, tpLH = 0.5µs (max.) · Isolation voltage: 2500 Vrms (min.) · UL recognized: UL1577, file no. E67349 · Option (D4) type TOSHIBA VDE approved: DIN VDE0884 / 06.92、認定 No. 76823 11−10C402 Weight: 0.54 g Maximum operating insulation voltage: 1140VPK Highest permissible over voltage: 6000VPK (Note 1) When a VDE0884 approved type is needed, please designate the “ Option (D4) ” · Structural parameter Creepage distance: 8.0mm (min.) Clearance: 8.0mm (min.) Truth Table Tr1 Input LED Tr2 On On Off Off Off On 1 2002-09-25
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
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