DSEP 8-03A
HiPerFREDTM Epitaxial Diode
IFAV = 10 A
VRRM = 300 V
trr
= 30 ns
with soft recovery
VRSM
VRRM
V
300
TO-220 AC
V
300
Type
C
A
C
DSEP 8-03A
A
C (TAB)
D4
Symbol
Conditions
IFRMS
IFAVM
TC = 130°C; rectangular, d = 0.5
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
EAS
TVJ = 25°C; non-repetitive
IAS = 2 A; L = 180 µH
IAR
de
si
gn
A = Anode, C = Cathode, TAB = Cathode
Maximum Ratings
VA = 1.5·VR typ.; f = 10 kHz; repetitive
A
0.5
mJ
0.2
A
w
A
A
60
-55...+175
175
-55...+150
TC = 25°C
Md
mounting torque
Weight
typical
Symbol
Conditions
RthJC
RthCH
2
fo
Nm
g
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
60
0.25
µA
mA
IF = 10 A;
1.29
1.75
V
V
2.5
0.5
K/W
K/W
30
ns
t
VF ②
W
0.4...0.6
TVJ = 150°C
TVJ = 25°C
No
①
60
r
Ptot
°C
°C
°C
ne
TVJ
TVJM
Tstg
IR
35
10
trr
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V; TVJ = 25°C
IRM
VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs
TVJ = 100°C
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
2.4
A
Features
•
•
•
•
•
•
•
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Recommended replacement:
DPG10I300PA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
025
Data according to IEC 60747 and per diode unless otherwise specified
20080317a
1-2
