製品説明 仕様・特性: IXTH40N30 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)300 V(BR)GSS (V)20 I(D) Max. (A)40 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) I(GSS) Max. (A)100n

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IXTH40N30 90734

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