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DSEP29-12A
DHG 30 I 1200 HA V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 30 A 200 ns Part number DHG 30 I 1200 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-247 Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current min. typ. max. Unit threshold voltage rF slope resistance 30 A TVJ = 25 °C 2.26 V 60 A 3.00 V 30 A IF = average forward current mA IF = I FAV 0.5 IF = VF0 50 TVJ = 125 °C IF = VF V µA VR = 1200 V forward voltage 1200 VR = 1200 V TVJ = 25 °C TVJ = 25 °C 60 A rectangular TVJ = 125 °C d = 0.5 max. forward surge current I RM 30 A 1.25 V mΩ K/W 150 °C TC = 25 °C max. reverse recovery current 30 0.70 total power dissipation I FSM TC = 90°C TVJ = 150°C 180 W TVJ = 45°C 200 A virtual junction temperature Ptot V V 1.95 thermal resistance junction to case T VJ 2.27 3.20 for power loss calculation only R thJC 1.95 -55 t = 10 ms (50 Hz), sine TVJ = 25 °C IF = 30 A; VR = 600 V 23 A TVJ = 125°C 30 A CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved -di F /dt = 600 A/µs VR = 600 V; f = 1 MHz TVJ = 25 °C 200 ns TVJ = 125°C t rr 350 ns TVJ = 25 °C 11 pF Data according to IEC 60747and per diode unless otherwise specified 20110510a
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