VDSM
ITAVM
ITRMS
ITSM
VT0
rT
=
=
=
=
=
=
2800 V
1400 A
2210 A
18000 A
0.82 V
0.37 mΩ
Ω
Phase Control Thyristor
5STP 16F2800
Doc. No. 5SYA1022-03 Jan. 02
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol
Conditions
5STP 16F2800
5STP 16F2600
5STP 16F2200
VDRM, VRRM
f = 50 Hz, tp = 10 ms
2800 V
2600 V
2200 V
VRSM
tp = 5 ms, single pulse
3000 V
2800 V
2400 V
dV/dtcrit
Exp. to 0.67 x VDRM, Tvj = 125°C
1000 V/µs
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Forward leakage current
IDRM
VDRM, Tvj = 125°C
200
mA
Reverse leakage current
IRRM
VRRM, Tvj = 125°C
200
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
FM
Acceleration
a
Acceleration
a
min
14
typ
22
max
Unit
24
kN
Device unclamped
50
m/s
2
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
Weight
m
Surface creepage distance
DS
25
mm
Air strike distance
Da
14
mm
1)
min
typ
0.6
Maximum ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
Unit
kg