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TK7S10N1Z
TK7S10N1Z MOSFETs Silicon N-channel MOS (U-MOS-H) TK7S10N1Z 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) 25 Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 7 Drain current (pulsed) (Note 1) IDP 21 Power dissipation (Tc = 25) A (Note 2) PD 50 W (Note 3) Single-pulse avalanche energy EAS 19.6 mJ Single-pulse avalanche current IAS 7 A dVDS/dt Turn-off dVDS/dt ruggedness 8.4 V/ns Channel temperature (Note 4) Tch 175 Storage temperature (Note 4) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1 2014-01 2015-06-19 Rev.4.0
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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