CMOS SRAM
K6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No.
History
Draft Date
Remark
0.0
Initial Draft
December 7, 1996
Advance
0.1
Revise
- Changed Operating current by reticle revision
ICC at write : 35mA → 45mA
ICC1 at read/write : 15/35mA → 10/45mA
March 6, 1997
Preliminary
1.0
Finalize
- Changed Operating current
ICC1 at write : 45mA → 40mA
ICC2; 90mA → 80mA
- Change test load at 55ns : 100pF → 50pF
October 9, 1997
Final
2.0
Revise
- Change datasheet format
February 17, 1998
Final
3.0
Revise
- Industrial product speed bin change:70/100ns → 55/70ns
September 8, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0
September 1998
