K7B403625B
K7B401825B
128Kx36 & 256Kx18 Synchronous SRAM
Document Title
128Kx36 & 256Kx18-Bit Synchronous Burst SRAM
Revision History
History
Draft Date
Remark
0.0
1. Initial draft
May. 15. 2001
Preliminary
0.1
1. Changed DC parameters
Icc ; from 300mA to 250mA at -65,
from 280mA to 230mA at -75,
from 260mA to 210mA at -80,
from 240mA to 190mA at -90,
June. 12. 2001
Preliminary
Aug. 11. 2001
Preliminary
Rev. No.
Icc ; from 140mA
from 130mA
from 120mA
from 110mA
0.2
to
to
to
to
130mA at -65,
120mA at -75,
110mA at -80,
100mA at -90,
ISB1 ; from 100mA to 80mA
1. Add x32 org. and industrial temperature
1.0
1. Final spec release
2. Changed Pin Capacitance
- Cin ; from 5pF to 4pF
- Cout ; from 7pF to 6pF
Nov. 15. 2001
Final
2.0
1. Remove x32 organization
2. Remove -80 speed bin
Nov. 17. 2003
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Nov 2003
Rev 2.0
