PRELIMINARY
K6R1008V1A-C, K6R1008V1A-I
CMOS SRAM
Document Title
128Kx8 High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
History
Rev. 0.0
Initial release with Design Target.
Jan. 18th, 1995
Design Target
Rev. 1.0
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Apr. 22th, 1995
Preliminary
Rev. 2.0
Release to final Data Sheet.
2.1. Delete Preliminary.
Feb. 29th, 1996
Final
Rev. 3.0
Add Low Power Product and update D.C parameters.
3.1. Add Low Power Products with ISB1=0.5mA and Data Retention
Mode(L-ver. only).
3.2. Update D.C parameters.
Previous spec.
Updated spec.
ITEMS
(12/15/17/20ns part)
(12/15/17/20ns part)
ICC
170/165/160/155mA
140/135/135/130mA
ISB
30mA
20mA
ISB1
10mA
5mA
Jul. 16th, 1996
Final
Rev. 4.0
Add Industrial Temperature Range parts and 300mil 32-SOJ PKG.
4.1. Add 32-Pin 300mil-SOJ Package.
4.2. Add Industrial Temperature Range parts with the same parameters as Commercial Temperature Range parts.
4.2.1. Add K6R1008V1A parts for Industrial Temperature Range.
4.2.2. Add ordering information.
4.2.3. Add the condition for operating at Industrial Temp. Range.
4.3. Add timing diagram to define tWP as ″(Timing Wave Form of
Write Cycle(CS=Controlled)″.
Jun. 2nd, 1997
Final
Feb. 25th, 1998
Final
Rev. 5.0
Draft Data
5.1. Delete L-version.
5.2. Delete Data Retention Characteristics and Wavetorm.
5.3. Delete 17ns Part.
5.4. Add Capacitive load of the test environment in A.C test load.
Remark
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 5.0
February 1998
