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K6R1008V1C-TC15
PRELIMINARY P K6R1008V1C-C/C-L, K6R1008V1C-I/C-P CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Initial release with Preliminary. Rev. 1.0 Relax DC characteristics. Item ICC 12ns 15ns 20ns Rev. 2.0 Draft Data Aug. 5. 1998 Mar. 3. 1999 VIH VIL Apr. 24. 2000 Rev. 4.0 Max VCC+0.5 0.8 Final Oct. 2. 2000 Final Sep. 24. 2001 Previous Min 2.0 -0.5 Final Final Changed 0.5mA VIH/VIL Change Item Preliminary Changed 75mA 73mA 70mA Add 10ns part. Rev. 3.1 Preliminary Sep. 7. 1998 Previous 70mA 68mA 65mA Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Changed Standby Current. Item Previous Standby Current(Isb1) 0.3mA 2.3. Added Data Retention Characteristics. Rev. 3.0 Remark Changed Min 2.0 -0.3 Delete 20ns speed bin Max VCC+0.3 0.8 The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 4.0 September 2001
SAMSUNG
Samsung Electronics Co., Ltd
韓国
DRAM製品、モバイル機器の製造販売メーカー
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