製品説明 仕様・特性: KM736V747 KM718V847 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA Oct. 10. 1998 Preliminary 0.2 Add VDDQ Supply voltage( 2.5V I/O ) Dec. 10. 1998 Preliminary 0.3 Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O. Dec. 23. 1998 Preliminary 1.0 Final spec Release Jan. 29. 1999 Final 2.0 Remove VDDQ Supply voltage(2.5V I/O) Feb. 25. 1999 Final 3.0 Add VDDQ Supply voltage(2.5V I/O) May. 13. 1999 Final 4.0 Change tCD value form 8.5ns to 8.0ns at -8 July. 16. 1999 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- July 1999 Rev 4.0

お探しのKM736V747T-10は、クレバーテックの営業STAFFが在庫調査を行いemailにて見積回答致します。

「見積依頼」をクリックして　どうぞお進み下さい。

お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。
１万円未満の場合、また時間指定便はお客様負担となります。
（送料は地域により異なります。）

類似型番をお探しのお客様はこちらをクリックして下さい。
KM736V747T-10	KM736V749T	KM736V749T-10	KM736V749T-67	KM736V749T-75
KM736V787T-7	KM736V787T-8	KM736V787T-9	KM736V789	KM736V789-72
KM736V789T50	KM736V789T-60	KM736V789T-67	KM736V789T-72	KM736V789TE60
KM736V789TE-67	KM736V790T-10	KM736V790T72	KM736V799H-55	KM736V799T-40
KM736V799T-44	KM736V799T-50	KM736V799T-50T	KM736V799T-55

KM736V747T-10 SAMSUNG

部品型式