PRELIMINARY
for AT&T
CMOS SRAM
K6R1008V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
History
Draft Data
Remark
Rev. 0.0
Rev. 0.1
Rev. 0.2
Initial document.
Speed bin modify
Current modify
May. 11. 2001
June. 18. 2001
September. 9. 2001
Preliminary
Preliminary
Preliminary
Rev. 1.0
1. Final datasheet release.
2. Delete 12ns speed bin.
3. Change Icc for Industrial mode.
Item
Previous
8ns
100mA
ICC(Industrial)
10ns
85mA
December. 18. 2001
Final
Current
90mA
75mA
Rev. 2.0
1. Delete UB,LB releated timing diagram.
June. 19. 2002
Final
Rev. 3.0
1. Add the Lead Free Package type.
June. 20, 2003
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 3.0
June 2003
