2SK170
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK170
Low Noise Audio Amplifier Applications
•
Unit: mm
Recommended for first stages of EQ and M.C. head amplifiers.
•
High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
•
High breakdown voltage: VGDS = −40 V
•
Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
•
High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VGDS
−40
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Gate-drain voltage
Storage temperature range
Note:
JEDEC
TC-92
Using continuously under heavy loads (e.g. the application of
JEITA
SC-43
high temperature/current/voltage and the significant change in
TOSHIBA
2-5F1D
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.21 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = −30 V, VDS = 0
⎯
⎯
−1.0
nA
V (BR) GDS
VDS = 0, IG = −100 μA
−40
⎯
⎯
V
VDS = 10 V, VGS = 0
2.6
⎯
20
mA
VDS = 10 V, ID = 0.1 μA
−0.2
⎯
−1.5
V
IDSS
(Note)
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz
⎯
22
⎯
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
30
⎯
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
⎯
6
⎯
pF
NF (1)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f = 1 kHz
⎯
1.0
10
NF (2)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f = 1 kHz
⎯
0.5
2
Noise figure
dB
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
1
2007-11-01
