tSe.mi-Conciu.cko'i ^Pioducti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MJE3439
NPN Silicon High-Voltage Power
Transistors
0.3 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS
15 WATTS
. . . designed for use in line-operated equipment requiring high ff.
•
•
•
High DC Current Gain
hpE = 40-160 @ Ic = 20 mAdc
Current Gain Bandwidth Product —
ft = 15 MHz (Min) @ IG = 10 mAdc
Low Output Capacitance
= 1 0 p F ( M a x ) @ f = 1.0MHz
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
350
Vdc
450
Vdc
5.0
Vdc
Collector Current — Continuous
VCB
VEB
ic
0.3
Adc
Base Current
. IB
150
mAdc
PD
15
0.12
Watts
W/°C
-65 to +150
°C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ.
Tstg
TO-225AA TYPE
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
9JC
8.33
°C/W
Thermal Resistance, Junction to Case
10
H^_^^_
14
^s
\
\
10
8.0
\
20
40
60
80
100
120
140
160
6.0
2.0
n
TC, CASE TEMPERATURE (°C)
Figure 1. Power-Temperature Derating Curve
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Concluctors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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