TECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Devices
2N3019
2N3019S
2N3057A
MAXIMUM RATINGS
Ratings
2)
2N3700
2N3700S
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
@ TC = +250C(2)
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
Operating & Storage Jct Temp Range
1)
Qualified Level
JAN
JANTX
JANTXV
JANS
Value
Units
VCEO
VCBO
VEBO
IC
80
140
7.0
1.0
Vdc
Vdc
Vdc
Adc
PT
0.8
0.4
0.5
0.4
TJ, Tstg
5.0
1.8
1.8
1.16
-55 to +175
TO-39* (TO-205AD)
2N3019, 2N3019S
W
TO- 18* (TO-206AA)
2N3700
W
TO-46* (TO-206AB)
2N3057A
0
C
Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A;
2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA ≥ +250C.
Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S;
10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC ≥ +250C.
3 PIN SURFACE MOUNT*
2N3700UB
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
V(BR)CBO
140
Vdc
V(BR)EBO
7.0
Vdc
V(BR)CEO
80
Vdc
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 µAdc
Emitter-Base Breakdown Voltage
IE = 100 µAdc
Collector-Emitter Breakdown Current
IC = 30 mAdc
6 Lake Street, Lawrence, MA 01841
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