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ET410
ET410 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)200è V(BR)CBO (V)300 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A)250u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain. @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq2.5M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) t(d) Max. (s) Delay time. t(r) Max. (s) Rise time400n t(on) Max. (s) On time.
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