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VCR2N
VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VGS(off) Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N −7 −25 60 VCR4N −7 −25 600 VCR7N −5 −25 8000 FEATURES BENEFITS APPLICATIONS D Continuous Voltage-Controlled Resistance D High Off-Isolation D High Input Impedance D Gain Ranging Capability/Wide Range Signal Attenuation D No Circuit Interaction D Simplified Drive D Variable Gain Amplifiers D Voltage Controlled Oscillator D AGC DESCRIPTION The VCR2N/4N/7N JFET voltage controlled resistors have an ac drain-source resistance that is controlled by a dc bias voltage (VGS) applied to their high impedance gate terminal. Minimum rDS occurs when VGS = 0 V. As VGS approaches the pinch-off voltage, rDS rapidly increases. This series of junction FETs is intended for applications where the drain-source voltage is a low-level ac signal with no dc component. Key to device performance is the predictable rDS change versus VGS bias where: r DS(@ V GS + 0) r DSbias [ Ť Ť V GS 1– V GS(off) These n-channel devices feature rDS(on) ranging from 20 to 8000 W . All packages are hermetically sealed and may be processed per MIL-S-19500 (see Military Information). TO-206AA (TO-18) TO-206AF (TO-72) S S C 1 1 2 2 3 D 4 G and Case 3 D G Top View Top View VCR2N, VCR4N VCR7N For applications information see AN105. Document Number: 70293 S-41225—Rev. F, 28-Jun-04 www.vishay.com 1
INTERSIL
1999年8月に、Harris Corporationの半導体事業の取得によって発足したグローバル企業である。
Intersil
パワーマネジメントIC企業であり、産業、インフラ、モバイル、車載、航空宇宙機器向けの高効率パワーマネジメントと高精度アナログ技術の開発に携わっている。
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