DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear
gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band amplifiers etc. The
NE960R200 is available in chip form. The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink)
for superior RF performance. The NE960R275 is available in a hermetically sealed ceramic package. Reliability and
performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• High Output Power
: Po (1 dB) = +25.0 dBm TYP.
• High Linear Gain
: 10.0 dB TYP.
• High Power Added Efficiency : 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHz
ORDERING INFORMATION
Part Number
Package
NE960R200
00 (CHIP)
NE960R275
Supplying Form
ESD protective envelope
75
Remark
To order evaluation samples, please contact your nearby sales office.
Part number for sample order:NE960R200, NE960R275
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10025EJ02V0DS (2nd edition)
Date Published August 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1998, 2003
