NPN Power Silicon Transistor
2N3766 & 2N3767
Features
•
Available in JAN, JANTX, and JANTXV
per MIL-PRF-19500/518
•
TO-66 (TO-213AA) Package
Maximum Ratings
Symbol
2N3766
2N3767
Units
Collector - Emitter Voltage
Ratings
VCEO
60
80
Vdc
Collector - Base Voltage
VCBO
80
100
Vdc
Emitter - Base Voltage
VEBO
6.0
Vdc
Base Current
IB
2.0
Adc
Collector Current
IC
4.0
Adc
Total Power Dissipation @ TC = +25 °C (1)
PT
25
W
Top, Tstg
-65 to +200
°C
Operating & Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
Maximum
Units
RθJC
2.66
°C/W
1) Derate linearly 143 mW/°C between TC = +25°C and TC = +200°C
Electrical Characteristics (TC = 25°C unless otherwise noted)
OFF Characteristics
Symbol
Collector - Emitter Breakdown Voltage
IC = 100 mAdc
2N3766
2N3767
Mimimum
Maximum
Units
V(BR)CEO
60
80
---
Vdc
Collector - Emitter Cutoff Current
VCE = 60 Vdc
VCE = 80 Vdc
2N3766
2N3767
ICEO
---
500
500
μAdc
Collector - Emitter Cutoff Current
VCE = 80 Vdc, VBE = 1.5 Vdc
VCE = 100 Vdc, VBE = 1.5 Vdc
2N3766
2N3767
ICEX
---
10
μAdc
Collector - Base Cutoff Current
VCB = 80 Vdc
VCB = 100 Vdc
2N3766
2N3767
ICBO
---
10
10
μAdc
IEBO
---
500
μAdc
Emitter - Base Cutoff Current
VEB = 6.0 Vdc
Revision Date: 4/3/2013
New Product
1